上海科技大学人力资源管理
ShanghaiTech University Human Resources
   Yumeng Yang   Assistant Professor, PI
InstituteSchool of Information Science and Technology
Research AreaSpintronic devices for memory and sensor applications, device noise characterizations
Contact Info.yangym1@shanghaitech.edu.cn
 
 Biography 

 

Dr. Yumeng Yang received B.Sc. degree in Materials Science from Sichuan University in 2011. In the same year, guided by Prof. Huaqiang Wu, he had a short internship in the Institute of Microelectronics from Tsinghua University. From 2012 to 2016, he pursued Ph.D. degree in Electrical and Computer Engineering from National University of Singapore under the guidance of Prof. Yihong Wu.He was the recipient of President’s Graduate Fellowship during 2014 to 2015. After that, he worked as a research engineer and research fellow in the same group until December 2019. In January 2020, he joined the School of Information Science and Technology at ShanghaiTech University as an assistant professor.

He has authored or co-authored many papers on top tier journals, including Science, Nature Communications, Physical Review Applied, Physical Review B, Applied Physics Letter and etc. He serves as the reviewer for journals such as Japanese Journal of Applied Physics and IEEE Transaction on Magnetics. He is also the co-inventor for two US patents and one PCT patent. 




 Research Interests 

His research interest lies in the design, fabrication and characterization of electronic devices working on the basis of “spin” degree of freedom, so-called “spintronic devices”. In particular, he is exploring new schemes to realize the next generation of low-power and ultrafast memory or sensor devices. 


 Selected Publications 

1.       Y. Wang*, D. Zhu*, Y. Yang, K. Lee, R. Mishra, G. Go, S.-H. Oh, D.-H. Kim, K. Cai, E. Liu, S. D. Pollard, S. Shi, J. Lee, K. L. Teo, Y. Wu, K.-J. Lee, H. Yang, Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator, Science 366, 1125 (2019)

2.       Z. Luo, Q. Zhang, Y. Xu, Y. Yang, X. Zhang, and Y. Wu, Spin-Orbit Torque in a Single Ferromagnetic Layer Induced by Surface Spin Rotation, Phys. Rev. Appl. 11, 064021 (2019).

3.       Y. Yang, Y. Xu, H. Xie, B. Xu, and Y. H. Wu, Semitransparent anisotropic magnetoresistance sensors enabled by spin-orbit toque biasing, Applied Physics Letters 111, 032402 (2017).

4.       Y. Yang, J. Yuan, L. Qi, Y. Wang, Y. Xu, X. Wang, Y.P. Feng, B. Xu, L. Shen and Y. H. Wu, Unveiling the role of Co-O-Mg bond in magnetic anisotropy of Pt/Co/MgO using atomically controlled deposition and in-situ electrical measurement, Physical Review B 95, 094417 (2017).

5.       Y. Yang, Y. Xu, X. Zhang, Y. Wang, S. Zhang, R.-W. Li, M. S. Mirshekarloo, K. Yao, and Y. H. Wu, Fieldlike spin-orbit torque in ultrathin polycrystalline FeMn films, Physical Review B 93, 094402 (2016).

6.       Y. Xu, Y. Yang, K. Yao, B. Xu, and Y. H. Wu, Self-current induced spin-orbit torque in FeMn/Pt multilayers, Scientific Reports 6, 26180 (2016)

7.       Y. Yang, Y. Xu, K. Yao, and Y. H. Wu, Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers, AIP Advances 6, 065203 (2016);

8.       Y. Yang, B. L. Wu, K. Yao, S. Shannigrahi, B. Zong, and Y. Wu, Investigation of magnetic proximity effect in Ta/YIG bilayer Hall bar structure, Journal of Applied Physics 115, 17C509 (2014).

9.       Y. H. Wu, Y. Xu, Y. Yang, “Magnetoresistance Sensor with AC Biasing and Rectification Detection”, PCT patent, WO/2019/093964, 2019-5-16

10.   Y. H. Wu, Y. Xu, Z. Luo, Y. Yang, “Method for providing a magnetic sensor with a biasing spin-orbit effective field”, US patent, US 2018/0106873 A1, 2018-4-19

11. H. Wu, Y. Xu, Y. Yang, “Magnetization-Switching Magnetic System”, US patent, US 2017/0279038 A1, 2017-9-28