上海科技大学人力资源管理
ShanghaiTech University Human Resources
陈佰乐    助理教授、研究员
所在学院信息科学与技术学院
研究方向雪崩光电二极管、高速光电探测器、子器件、下一代光通信器件
联系方式chenbl@shanghaitech.edu.cn
 
 个人简介 

    陈佰乐于2007年本科毕业中国科学技术大学近代物理系,并获得Panasonic育英奖学金,后分别于2009年和2013年在美国弗吉尼亚大学获得物理学硕士学位和电子工程博士学位。随后他加入位于美国俄勒冈的Qrovo (前身为Triquint Semiconductor)总部任射频产品研发工程师,从事多种不同频段的功率放大器和体声波滤波器等无线通信元器件的研发和量产工作。在工业界从事多年之后,他于2016年1月全职加入上海科技大学信息科学与技术学院,任助理教授(终身教授序列)、研究员、博士生导师。2019年8月至2020年1月,他应邀在美国加州大学圣芭芭拉分校电子计算机工程系(John Bowers教授组)访问。他现为IEEE Access的副主编,同时也是国际电气与电子工程师协会和美国光学协会的会员。

    目前陈佰乐博士主持科技部国家重点研发计划(光电子微电子专项)子课题,国家自然科学基金面上项目,以及多项中科院重点实验室项目。陈佰乐博士至今发表论文40余篇,其中23篇论文以第一作者或者通讯作者发表于Optica, ACS Photonics, IEEE Journal of Lightwave Technology, IEEE Journal of Quantum Electronics, IEEE Photonics Technology Letter, IEEE Transactions on Electron Devices, Applied Physics Letters, Optics Letters, Optics Express等国际知名期刊。此外,陈佰乐博士主要负责半导体器件物理和光电器件等本科生和研究生课程。

 主要研究内容 
  • 雪崩光电二极管

  • 高速光电探测器

  • 子器件

  • 下一代光通信器件

 代表性论文 


  1. Yaojiang Chen, Xuliang Chai, Zhiyang Xie, Zhuo Deng, Ningtao Zhang, Yi Zhou*, Zhicheng Xu, Jianxin Chen, Baile Chen*, 'High-Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaAsSb Type-II Superlattice', IEEE Journal of Lightwave Technology.

  2. Yaojiang Chen, Zhiyang Xie, Jian Huang, Zhuo Deng, Baile Chen*, “High-speed uni-traveling carrier photodiode for 2 μm wavelength application”, Optica, vol. 6, no. 7, pp. 884-889, 2019.

  3. Jian Huang#, Yating Wan#, Daehwan Jung, Justin Norman, Chen Shang,  Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers, Baile Chen*, “Defect Characterization of InAs/InGaAs Quantum Dot p‐i‐n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate”, ACS Photonics, vol. 6, no. 5, pp. 1100-1105, 2019.

  4. Zhuo Deng#,  Daqian Guo#,  Jian Huang, Huiyun Liu,  Jiang Wu*, Baile Chen*,  Mid-wave infrared InAs/GaSb type-II superlattice photodetector with p-i-B-n deisgn grown on GaAs substrate , IEEE Journal of Quantum Electronics, vol. 55, no. 4, pp. 1-5, Aug. 2019, Art no. 4000205.

  5. Yaojiang Chen, Baile Chen*, Design of InP Based High Speed Photodiode for 2 μm Wavelength Application, IEEE Journal of Quantum Electronics, vol. 55, no. 1, pp. 1-8, Feb. 2019, Art no. 4400108.

  6. Yaojiang Chen, Xuyi Zhao, Jian Huang, Zhuo Deng, Chunfang Cao, Qian Gong, Baile Chen*, “Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes”, Optics Express, vol. 26, Issue 26, pp. 35034-35045, 2018.

  7. Jian Huang#, Daqian Guo#, Zhuo Deng, Wei Chen, Huiyun Liu, Jiang Wu*, and Baile Chen*, “Mid-wave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, vol. 36, no. 18, pp. 4033-4038, 2018.

  8. Wei Chen#, Zhuo Deng#, Daqian Guo, Yaojiang Chen, Yuriy Mazur, Yurii Maidaniuk, Mourad Benamara, Gregory J Salamo, Huiyun Liu, Jiang Wu*, Baile Chen*, “Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-well Mid-wave Infrared Photodetectors Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, vol. 36, no. 12, pp. 2572-2581, 2018.

  9. Zhuo Deng, Baile Chen*, Xiren Chen, Jun Shao*, Qian Gong, Huiyun Liu, Jiang Wu*, “Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate”, Infrared Physics & Technology, vol. 90, pp. 115–121, 2018.

  10. Claudia González Burguete, Daqian Guo, Pamela Jurczak, Fan Cui, Mingchu Tang, Wei Chen, Zhuo Deng, Yaojiang Chen, Marina Gutiérrez, Baile Chen, Huiyun Liu, Jiang Wu, “Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates”, IET Optoelectronics, vol. 12, no. 1, pp. 2-4, 2018.

  11. J Huang#, D Guo#, W Chen, Z Deng, Y Bai, T Wu, Y Chen, H Liu, J Wu*, Baile Chen*, Sub-monolayer quantum dot quantum cascade mid-infrared photodetector,  Applied Physics Letters, vol. 111, no. 25, 251104, 2017.

  12. Baile Chen*, “Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers”, Optics Express, vol. 25, no. 21, pp. 25183-25192, 2017.

  13. Baile Chen*, “Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers,” IEEE Transactions on Electron Devices, vol. 64, pp. 1606-1611, 2017.

  14. Baile Chen*, A. L. Holmes Jr, “InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region”, Optics Letters, vol. 38, issue 15, pp. 2750-2753, 2013

  15. Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat, “SWIR/MWIR InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells”, IEEE Quantum Electronics, vol. 47, issue 9, pp. 1244-1250, September, 2011.

  16. Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat, “Demonstration of a Room Temperature InP-based Photodetector Operating beyond 3 μm”, IEEE Photonics Technology Letters, vol. 23, no. 4, pp. 218-220, February, 2011.